Chapter 2: Getting Started
Compile the Design
1
2–7
In all cases, the testbench is in Verilog HDL, therefore a license to run mixed language
simulations is required to run the testbench with the VHDL model.
Altera recommends that you disable the auto-ROM replacement feature in the
Quartus II software. Enabling this feature produces a smaller but slower MegaCore
function.
Compile the Design
You can use the Quartus II software to compile your design. Refer to Quartus II Help
for instructions on compiling your design.
Program a Device
After you have compiled your design, program your targeted Altera device, and
verify your design in hardware.
May 2011
Altera Corporation
8B10B Encoder/Decoder MegaCore Function User Guide
相关PDF资料
IP-FFT IP FFT/IFFT
IP-FIR IP FIR COMPILER
IP-NCO IP NCO COMPILER
IP-NIOS IP NIOS II MEGACORE
IP-PCI/MT64 IP PCI 64BIT MASTER/TARGET
IP-PCIE/8 IP PCI EXPRESS, X8
IP-POSPHY4 IP POS-PHY L4
IP-RIOPHY IP RAPID I/O
相关代理商/技术参数
IPEH-002021E 制造商:Phytec 功能描述:PCAN-USB
IPF039N03L G 功能描述:MOSFET N-CH 30V 50A 3.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IPF039N03LG 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS?3 Power-Transistor Features Fast switching MOSFET for SMPS
IPF04N03LA 功能描述:MOSFET N-CH 25V 50A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IPF04N03LA G 功能描述:MOSFET N-CH 25V 50A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
IPF04N03LAG 功能描述:MOSFET N-Channel MOSFET 20-200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IPF04N03LBG 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor
IPF050N03LG 功能描述:MOSFET N-Channel MOSFET 20-200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube